Product introduction

Meet semiconductor integrated circuit, the power electronic devices, optoelectronic industry etc used in silicon deposition on 3N4 O2, Si Si Si, phosphorus, Poly - silicon glass and high-borosilicate glass, amorphous silicon and infusible metal silicides etc. Various film technology.

CVD system performance features:
Structure: 1-4 pipe horizontal hot wall type
Specification: silicon wafer 2-8 inches (or 125×125mm, 156×156mm square piece),
Temperature range: 300 ~ 1,100 degrees
Temperature length and precision 200mm: (± 1℃/1000mm - 24h),
Deposition film uniformity: piece of ± 5% within ± 5% between batch of ± 5%
Film thickness: 6-1 5000A
Limiting vacuum system 1Pa superior:
Working pressure range: 20 ~ 133Pa closed-loop control
Control mode: industrial microcomputer
Feeding device: cantilever push-pull boat, a soft landing system
Deposition film classification: Si 3N4 Si02 PSG, Pply, and Si membrane. -
Vacuum pump, Bates: JiXieBeng
Process: 5 and gas/tube. The VCR interface
40KFIz AE high-frequency pulse width modulation (PWM)
Pack piece quantity: 200 / boat